Akinori Koukitu: search on Z-Library

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1

Thick nonpolar m-plane and semipolar (

Iso, Kenji, Matsuda, Karen, Takekawa, Nao, Hikida, Kazuhiro, Hayashida, Naoto, Murakami, Hisashi, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2017

Language:

english

File:

PDF, 939 KB

english, 2017

2

Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor

Murakami, Hisashi, Takekawa, Nao, Shiono, Anna, Thieu, Quang Tu, Togashi, Rie, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

3

Thermodynamic analysis of molecular beam epitaxy of III–V semiconductors

Hisashi Seki, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

1986

Language:

english

File:

PDF, 715 KB

english, 1986

4

Investigation of NH 3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy

Hirasaki, Takahide, Hasegawa, Tomoyasu, Meguro, Misaki, Thieu, Quang Tu, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.48 MB

english, 2016

5

Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

Hirasaki, Takahide, Eriksson, Martin, Thieu, Quang Tu, Karlsson, Fredrik, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Holtz, Per Olof, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.03 MB

english, 2016

6

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source

Iso, Kenji, Gokudan, Yuya, Shiraishi, Masumi, Nishikado, Minae, Murakami, Hisashi, Koukitu, Akinori

Journal:

Journal of Electronic Materials

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

7

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and InxGa1−xN using GaCl3 and InCl3

Yoshinao Kumagai, Kikurou Takemoto, Takahiro Hasegawa, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

8

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

Yamaguchi, Akira, Oozeki, Daisuke, Kawamoto, Naoya, Takekawa, Nao, Bulsara, Mayank, Murakami, Hisashi, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

Journal:

physica status solidi (b)

Year:

2020

File:

PDF, 877 KB

2020

9

Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy

Kusaba, Akira, Kangawa, Yoshihiro, Kempisty, Pawel, Valencia, Hubert, Shiraishi, Kenji, Kumagai, Yoshinao, Kakimoto, Koichi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 870 KB

english, 2017

10

Growth of GaN on a three-dimensional SCAAT TM bulk seed by tri-halide vapor phase epitaxy using GaCl 3

Iso, Kenji, Oozeki, Daisuke, Ohtaki, Syoma, Murakami, Hisashi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 957 KB

english, 2019

11

Comparison of GaN growth processes on GaAs(1 1 1)A and (1 1 1)B substrates studied by ab initio calculation

Yuriko Matsuo, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 109 KB

english, 2002

12

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Hirasaki, Takahide, Asano, Kazuma, Banno, Mizuki, Ishikawa, Masato, Sakuma, Fumiaki, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.08 MB

english, 2014

13

Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy

Ema, Kentaro, Uei, Rio, Murakami, Hisashi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 754 KB

english, 2019

14

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Kinoshita, Toru, Obata, Toshiyuki, Nagashima, Toru, Yanagi, Hiroyuki, Moody, Baxter, Mita, Seiji, Inoue, Shin-ichiro, Kumagai, Yoshinao, Koukitu, Akinori, Sitar, Zlatko

Journal:

Applied Physics Express

Year:

2013

Language:

english

File:

PDF, 551 KB

english, 2013

15

Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Takekawa, Nao, Hayashida, Naoto, Ohzeki, Daisuke, Yamaguchi, Akira, Murakami, Hisashi, Kumagai, Yoshinao, Matsumoto, Koh, Koukitu, Akinori

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 1.41 MB

english, 2018

16

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga 2 O 3 (001) Schottky barrier diodes fabricated on n – –Ga 2 O 3 drift layers grown by halide vapor phase epitaxy

Higashiwaki, Masataka, Konishi, Keita, Sasaki, Kohei, Goto, Ken, Nomura, Kazushiro, Thieu, Quang Tu, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Monemar, Bo, Koukitu, Akinori, Kuramata, Akito,

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 677 KB

english, 2016

17

Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy

Ema, Kentaro, Uei, Rio, Murakami, Hisashi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 754 KB

2019

18

Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer

Yuriko Matsuo, Yoshihiro Kangawa, Rie Togashi, Koichi Kakimoto, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 245 KB

english, 2007

19

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl 3

Iso, Kenji, Matsuda, Karen, Takekawa, Nao, Murakami, Hisashi, Koukitu, Akinori

Journal:

physica status solidi (b)

Year:

2017

Language:

english

File:

PDF, 736 KB

english, 2017

20

Tri-halide vapor-phase epitaxy of GaN using GaCl 3 on polar, semipolar, and nonpolar substrates

Iso, Kenji, Takekawa, Nao, Matsuda, Karen, Hikida, Kazuhiro, Hayashida, Naoto, Murakami, Hisashi, Koukitu, Akinori

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 708 KB

english, 2016

21

Thermodynamic analysis of molecular beam epitaxy of II–VI semiconductors

Akinori Koukitu, Hideo Nakai, Takeyuki Suzuki, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1987

Language:

english

File:

PDF, 451 KB

english, 1987

22

Atomic layer epitaxy of GaAsP and InAsP by halogen system

Koukitu, Akinori, Saegusa, Akihiko, Seki, Hisashi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 256 KB

english, 1990

23

High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy

Toru Nagashima, Manabu Harada, Hiroyuki Yanagi, Yoshinao Kumagai, Akinori Koukitu, Kazuya Takada

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 222 KB

english, 2007

24

Preface

Jaime A. Freitas Jr., Drew Hanser, Antonio F. da Silva, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 63 KB

english, 2008

25

Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu

Journal:

Applied Surface Science

Year:

2003

Language:

english

File:

PDF, 108 KB

english, 2003

26

Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System

Koukitu, Akinori, Seki, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

1977

File:

PDF, 491 KB

1977

27

In Situ Observation of Halogen-Transport Atomic Layer Epitaxy of GaAs in Inert Carrier Gas System

Takahashi, Naoyuki, Yagi, Minoru, Koukitu, Akinori, Seki, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 645 KB

1993

28

Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy

Kumagai, Yoshinao, Murakami, Hisashi, Koukitu, Akinori, Takemoto, Kikurou, Seki, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 240 KB

english, 2000

29

Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction

Kangawa, Yoshihiro, Kawaguchi, Norihito, Hida, Ken-nosuke, Kumagai, Yoshinao, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 130 KB

english, 2004

30

Study of the Decomposition Processes of (0001)AlN in a Hydrogen Atmosphere

Panyukova, Uliana, Suzuki, Hikari, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 113 KB

english, 2007

31

Vapour Growth of GaAs by H 2 Introduction into an Inert Carrier Gas Stream

Koukitu, Akinori, Seki, Hisashi, Fujimoto, Masatomo

Journal:

Japanese Journal of Applied Physics

Year:

1976

File:

PDF, 784 KB

1976

32

Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy

Hitoshi Ikeda, Yoshiki Miura, Naoyuki Takahashi, Akinori Koukitu, Hisashi Seki

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 480 KB

english, 1994

33

Thermodynamic study on phase separation during MOVPE growth of InxGa1−xN

Koukitu, Akinori, Seki, Hisashi

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 185 KB

english, 1998

34

Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy

Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 359 KB

english, 2011

35

Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films

Yayama, Tomoe, Kangawa, Yoshihiro, Kakimoto, Koichi, Koukitu, Akinori

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 106 KB

english, 2009

36

Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2

Yoshinao Kumagai, Kazuhiro Akiyama, Rie Togashi, Hisashi Murakami, Misaichi Takeuchi, Toru Kinoshita, Kazuya Takada, Yoshinobu Aoyagi, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 448 KB

english, 2007

37

Thermodynamics on halide vapor-phase epitaxy of InN using InCl and InCl3

Yoshinao Kumagai, Kikurou Takemoto, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 246 KB

english, 2001

38

Effect of Ag addition on YBa2Cu3O7 − δ superconducting thin films prepared by mist microwave-plasma chemical vapor deposition

Naoyuki Takahashi, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 431 KB

english, 1996

39

Vacancy defects in UV-transparent HVPE-AlN

Kuittinen, Tanja, Tuomisto, Filip, Kumagai, Yoshinao, Nagashima, Toru, Kinoshita, Toru, Koukitu, Akinori, Collazo, Ramón, Sitar, Zlatko

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 273 KB

english, 2014

40

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Kirste, Ronny, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Sitar

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 932 KB

english, 2013

41

Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides

Koukitu, Akinori, Takahashi, Naoyuki, Seki, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 504 KB

1997

42

Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method

Hasegawa, Fumio, Yamate, Tsutomu, Yamamoto, Tadashi, Nannichi, Yasuo, Koukitu, Akinori, Seki, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 1.05 MB

1985

43

Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ Gravimetric Monitoring

Koukitu, Akinori, Takahashi, Naoyuki, Miura, Yoshiki, Seki, Hisashi

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 713 KB

1994

44

Vapor phase epitaxy of GaAs by the pulsed introduction of H2

Akinori Koukitu, Takeyuki Suzuki, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1985

Language:

english

File:

PDF, 250 KB

english, 1985

45

Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone method

Hitoshi Ikeda, Yoshihide Nishiyama, Akinori Koukitu, Hisashi Seki, Koichi Kuroiwa

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 606 KB

english, 1992

46

In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy

Akinori Koukitu, Naoyuki Takahashi, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 520 KB

english, 1996

47

HVPE growth of AlxGa1−xN ternary alloy using AlCl3 and GaCl

Akinori Koukitu, Fumitaka Satoh, Takayoshi Yamane, Hisashi Murakami, Yoshinao Kumagai

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 312 KB

english, 2007

48

Thermodynamic analysis of AlGaN HVPE growth

Akinori Koukitu, Jun Kikuchi, Yoshihiro Kangawa, Yoshinao Kumagai

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 285 KB

english, 2005

49

MOVPE-like HVPE of AlN using solid aluminum trichloride source

Ken-ichi Eriguchi, Hisashi Murakami, Uliana Panyukova, Yoshinao Kumagai, Shigeo Ohira, Akinori Koukitu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 176 KB

english, 2007

50

Substitution reaction of surface adsorbed P atoms to as atoms in the GaP/GaAs atomic layer epitaxy

Tetsuya Taki, Takahide Nakajima, Akinori Koukitu, Hisashi Seki

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 480 KB

english, 1998

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